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Attorneys/Agents
William F. Westerman
Ken-Ichi Hattori
Scott M. Daniels
Stephen G. Adrian
John P. Kong
Sadao Kinashi
Thomas E. Brown
Lee C. Wright
Michael J. Caridi
Shuji Yoshizaki*
Darrin A. Auito*
Kenneth H. Salen*
William M. Schertler*
Ryan B. Chirnomas
Andrew G. Melick
Nicolas E. Seckel
Stephen B. Parker
Kumiko Ide
Dennis M. Hubbs*
Robert Y. Raheja
Bernadette K. McGann*
 
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Ken-Ichi Hattori
Sadao Kinashi
Shuji Yoshizaki*
Tsuyoshi Nakamura*
Yoshiya Nakamura**

 

*Not admitted in DC; practice limited to matters and proceedings before federal courts and agencies.

**Limited Recognition at
the U.S. Patent Office

 

 






Michinori Irikawa

Email:MIrikawa@whda.com
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Ph.D. Electronic Engineering (Tokyo Institute of Technology, 2000)
M.S. Physics (Okayama University, 1978)
B.S. Physics (Ehime University, 1972)

LLM IP & Commerce (Franklin Pierce Law Center, 2008)
LLM Business Law (Hitotsubashi University, 2007)
LLB (Meiji University, 2007)

Language:
Japanese

Author:
“A study of Carrier Dynamics in 1.5 Micron-Wavelength Multi-Quantum Well Semiconductor Lasers”, Doctor Thesis, Tokyo Institutes of Technology, Sept. 2000.

“A Comparative Study of Exhaustion Doctrine and Implied Licenses,” Master thesis, Institute of International Corporate Strategy, Hitotsubashi Univ. July, 2007. (in Japanese)

Co-Author:
Over 20 papers on semiconductor lasers (carrier dynamics, differential gain characteristics, computer simulations on beam instability of high power lasers), photo detectors, hetero-junction bipolar transistors and growth of superlattice structures, including:  

“Improved Theory for Carrier Leakage and Diffusion in Multi-quantum well Semiconductor Lasers,” Jpn. J. Appl. Phys. Vol.39, 4A, pp.1730-1737, 2000.

“1.5 micron m wavelength compressively strained GaInAs/AlGaInAs multiquantum-well lasers grown by molecular-beam epitaxy with high differential gain and low threshold current density,” Appl. Phys. Lett. Vol. 67, No. 4, pp. 449-451, 1995.

“Beam Instability in 980-nm Power Lasers: Experiment and Analysis, IEEE Photon." Technol. Lett., vol. 6, no. 12, pp. 1409-1411, 1994.

Patents:
Inventor of over 15 Japanese and US patents including:

“Semiconductor Optical Devices with PN Current Blocking Layers of Wide-Band Gap Materials,” US Patent No. 5,214,662, 1993.

Prior Affiliation:
The Furukawa Electric Co., Ltd.
Hitachi Denshi Works
Hokushin Electric Works

Representative Technologies and Specialties:
Semiconductor Optical devices and process, Compound Semiconductor Transistors, Silicon MOS and Bipolar Transistors-device and process, Silicon LSI process, Microwave devices, Ceramic hybrid IC, Computer simulation for devices design and process, Fiber optic passive and active devices and equipments.